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APT8020JLL
800V
33A 0.200
S G D S
POWER MOS 7
(R)
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT8020JLL UNIT Volts Amps
800 33 132 30 40 520 4.16 -55 to 150 300 33 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.200 100 500 100 3 5
(VGS = 10V, ID = 16.5A)
Ohms A nA Volts
7-2004 050-7079 Rev B
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT8020JLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 33A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 33A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V ID = 33A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 533V, VGS = 15V ID = 33A, RG = 5
MIN
TYP
MAX
UNIT
5200 1000 190 195 27 130 12 14 39 10 760 715 1250 780
MIN TYP MAX UNIT Amps Volts ns C nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
33 142 1.3 920 20.7 10
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -33A)
Reverse Recovery Time (IS = -33A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -33A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ 5 dt
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.24 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 5.51mH, RG = 25, Peak IL = 33A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID33A di/dt 700A/s VR 800V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.25
, THERMAL IMPEDANCE (C/W)
0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM
7-2004
t1 t2
JC
050-7079 Rev B
Z
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
100 VGS =15 &10 V 7V 60 6.5V 40 6V 20 8V
APT8020JLL
80
0.0528
0.0203F
Power (watts)
0.0651
0.173F
0.123 Case temperature. (C)
0.490F
5.5V 5V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 100 80 60 TJ = +125C 40 20 0 TJ = +25C TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
0
NORMALIZED TO = 10V @ I = 16.5A
D
ID, DRAIN CURRENT (AMPERES)
1.30 1.20 1.10 1.00 VGS=20V 0.90 0.80 VGS=10V
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
35 30 25 20 15 10 5 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 16.5A = 10V
V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C)
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C)
050-7079 Rev B
7-2004
132 100
ID, DRAIN CURRENT (AMPERES)
20,000
OPERATION HERE LIMITED BY RDS (ON)
AP8020JLL
10,000 Ciss 100S
C, CAPACITANCE (pF)
50
10 1mS TC =+25C TJ =+150C SINGLE PULSE
1,000
Coss
10mS 100
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
1
1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 33A
200 100 TJ =+150C TJ =+25C 10
12 VDS=160V 8
VDS=400V
VDS=640V
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 180 160 td(off)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 100
V
DD G
= 533V
R
= 5
80
V
DD G
T = 125C
J
L = 100H
td(on) and td(off) (ns)
140 120 100 80 60 40 20 0 10
= 533V
R
= 5
T = 125C
J
L = 100H
tr and tf (ns)
60
tf
40 tr
td(on)
20
ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
20
30
40
50
60
2500
V
= 533V
40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5000
V I
DD
0 10
20
30
= 533V
R
= 5
SWITCHING ENERGY (J)
2000
SWITCHING ENERGY (J)
T = 125C
J
D J
= 38A
L = 100H E ON includes diode reverse recovery.
4000
T = 125C L = 100H EON includes diode reverse recovery.
Eoff
1500 Eon 1000 Eoff
3000 Eon 2000
7-2004
500
1000
050-7079 Rev B
ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
0 20 30 40 50 60 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5
Typical Performance Curves
90% TJ125C
APT8020JLL
Gate Voltage
10%
Gate Voltage
T 125C J
td(on) tr
90% 5% 10% Switching Energy 5% Drain Voltage Drain Current
td(off)
90% Drain Voltage
tf
10% 0 Drain Current Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF100
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7079 Rev B
7-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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